BSH111 |
RFQ for BSH111 |
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| Technical/Catalog Information | BSH111,215 |
| Vendor | NXP Semiconductors (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 335mA |
| Rds On (Max) @ Id, Vgs | 4 Ohm @ 500mA, 4.5V |
| Input Capacitance (Ciss) @ Vds | 40pF @ 10V |
| Power - Max | 830mW |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 1nC @ 8V |
| Package / Case | SST3 (SOT-23-3) |
| FET Feature | Logic Level Gate |
| Drawing Number | 568; SOT23; ; 3 |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | BSH111,215 BSH111,215 568 1657 6 ND 56816576ND 568-1657-6 |
| Product | Manufacturers | Pack | D/C |
| BSH111 | - | SOT-23 | - |
Typical Application |
Features |
| ·Battery management· High speed switch·Logic level translator. | · TrenchMOS™ technology· Very fast switching· Low threshold voltage· Subminiature surface mount package. |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
VDS |
drain-source voltage (DC) |
25 °C Tj 150 °C |
55 |
V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
VDGR |
drain-gate voltage (DC) |
25 °C Tj 150 °C; RGS = 20 k |
55 |
V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
VGS |
gate-source voltage (DC) |
±10 |
V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
ID |
drain current (DC) |
Tsp = 25 °C; VGS = 4.5V; Figure 2 and 3 |
335 |
mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Tsp = 100 °C; VGS = 4.5V; Fi
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